Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-07T08:26:22.323Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition, Defect and Weak Bond Formation Processes in a-Si:H

Published online by Cambridge University Press:  10 February 2011

J Robertson  and
M J Powell
J Robertson
Affiliation:
Engineering Dept, Cambridge University, Cambridge CB2 lPZ, UK
M J Powell
Affiliation:
Philips Research Labs, Redhill, Surrey RH1 5HA, UK
Get access

Abstract

The growth of a-Si:H and the resulting weak bond and defect formation mechanism is analysed in terms of the adsorbed Sill3 model of growth. It is found that this model describes the surface processes well, but it needs further development to correctly describe the temperature dependence of the formation of defects and weak bonds, since the surface defect density decreases monotonically with temperature and does not show a minimum near 250C. We show that the experimentally observed increase in hydrogen content, weak bond and defect density at lower deposition temperatures can be accounted for by a hydrogen evolution reaction from H2 * sites.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 897
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Stutzmann, M, Phil Mag B 60 531 (1989)Google Scholar
2 Yamasaki, S, Phil Mag B 56 79 (1987)Google Scholar
3 Cabarrocas, P Rocai, Bouizem, Y, Theye, M L, Phil Mag B 65 1025 (1992)Google Scholar
4 Beyer, W, J Non-Cryst Solids 198 40 (1996)Google Scholar
5 Ganguly, G, Matsuda, A, Phys Rev B 47 3661 (1993)Google Scholar
6 Street, R A, Phys Rev B 44 10610 (1991)Google Scholar
7 Winer, K, Phys Rev B 41 7952 (1990)Google Scholar
8 Powell, M J, Deane, S C, Phys Rev B 53 10121 (1996)Google Scholar
9 Matsuda, A, Nomoto, K, Takeuchi, Y, Suzuki, A, Yuuki, A, Perrin, J, Surf Sci 227 50 (1990)Google Scholar
10 Matsuda, A, Goto, T, Mat Res Soc Symp Proc 164 3 (1990)Google Scholar
11 Guizot, J L, Nomoto, K, Matsuda, A, Surf Sci 244 22 (1991)Google Scholar
12 Perrin, J, Takeda, Y, Hitano, N, Takeuchi, Y, Matsuda, A, Surf Sci 210 114 (1989)Google Scholar
13 Perrin, J, Shiratani, M, Kae-Nune, P, Videlot, H, Jolly, J, Guillon, J, J Vac Sci Technol A 16 278 (1998)Google Scholar
14 Muramatsu, Y, Yabumoto, N, App Phys Lett 49 1230 (1986)Google Scholar
15 Srinivasan, E, Parsons, G N, App Phys Lett 72456(1998)Google Scholar
16 Ikuta, K, Toyoshima, Y, Yamasaki, S, Matsuda, A, Tanaka, K, Mat Res Soc Symp Proc 420 413 (1996)Google Scholar
17 Flewitt, A, Robertson, J, Milne, W I, Mat Res Soc Symp Proc (this volume)Google Scholar
18 Li, Y M, An, I, Nguyen, H V, Wronski, C R, Collins, R W, Phys Rev Lett 68 2814 (1992)Google Scholar
19 Ganguly, G, Matsuda, A, J Non-Cryst Solids 164 31 (1993)Google Scholar
20 Acco, S et al. , Phys Rev B 53 4415 (1996); J App Phys 82 2862 (1997)Google Scholar
21 French, I D, Deane, S C, Murley, D T, Hewett, J, Gale, I G, Powell, M J, Mat Res Soc Symp Proc 467 875 (1997)Google Scholar
22 Perrin, J, Cabarrocas, P Rocai, Allain, B, Friedt, J M, Jpn J App Phys 27 2041 (1988)Google Scholar
23 Jackson, W B, J Non-Cryst Solids 164 263 (1993)Google Scholar
24 Beyer, W, Zastrow, U, Mat Res Soc Symp Proc 420 497 (1996)Google Scholar
25 Kushner, M J, J App Phys 63 2532 (1988)Google Scholar
26 Shirafuji, T, Nakajima, S, Wang, Y F, Genji, T, Tachibana, K, Jpn J App Phys 32 1546 (1993)Google Scholar
27 Robertson, J, Chen, C W, Powell, M J, Deane, S C, J Non-Cryst Solids (1998)Google Scholar