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Deposition of Cerium Dioxide Thin Films on Silicon Substrates by Atomic Layer Epitaxy

Published online by Cambridge University Press:  15 February 2011

Heini Mölsä  and
Lauri Niinistö
Heini Mölsä
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland
Lauri Niinistö
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland
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Abstract

CeO2 overlayers up to 360 nm thick were deposited on Si(100) substrates in a flowtype ALE reactor from Ce(thd)4 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) precursor and ozone. The growth rate was studied as a function of deposition and source temperatures, reactor pressure and pulse durations. The films were characterized for crystallinity, thickness and composition by using XRD, profilometry, XRF, RBS, XPS and SIMS techniques. Films deposited at 375 °C showed a preferential (110) orientation while at 425 °C they were (111) preferentially oriented. Due to the steric hindrance caused by the bulky precursor the growth rate was only 0.4 Å/cycle.

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