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Deposition of Tungsten Nitride thin Films from (tBuN)2w(NHtBu)2

Published online by Cambridge University Press:  15 February 2011

Hsin-Tien Chiu  and
Shiow-Huey Chuang
Hsin-Tien Chiu
Affiliation:
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050, R. O. C.
Shiow-Huey Chuang
Affiliation:
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050, R. O. C.
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Abstract

The possibility of growing tungsten nitride thin films from (tBuN)2W(NHtBu)2, a single-source molecular precursor with two nitrogen to tungsten double bonds, by low pressure chemical vapor deposition (LPCVD) was investigated. Deposition of thin films on silicon and glass substrates was carried out at temperatures 500 – 650 °C in a cold-wall reactor while the precursor was vaporized at 60 – 100 °C. Elemental composition of the thin films, studied by wavelength dispersive spectroscopy (WDS), is best described as WNx (x = 0.8 – 1.8). Elemental distribution within the films, studied by Auger depth profiling, is uniform. X-ray diffraction (XRD) studies show that the films have a cubic structure with a lattice parameter a = 4.14 – 4.18 Å. A stoichiometric WN thin film has a lattice parameter a equal to 4.154 Å. Volatile products, trapped at −196°C, were analyzed by nuclear magnetic resonance (NMR) and gas chromatography-mass spectrometry (GC-MS). Isobutylene, acetonitrile, hydrogen cyanide and ammonia were detected in the condensable mixtures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 317
Copyright
Copyright © Materials Research Society 1992

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