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Depth and Time Dependence of Polystyrene Chain Diffusion Near the Polystyrene/Silicon Interface

Published online by Cambridge University Press:  10 February 2011

Y. Trzhemechny ,
V. Hapovalov ,
K. G. Hou ,
S. A. Chwarz ,
J. Sokolov  and
M. H. Rafailovich
Y. Trzhemechny
Affiliation:
Queens College of CUNY, Dept. of Physics, Flushing, NY 11367
V. Hapovalov
Affiliation:
Queens College of CUNY, Dept. of Physics, Flushing, NY 11367
K. G. Hou
Affiliation:
Queens College of CUNY, Dept. of Physics, Flushing, NY 11367
S. A. Chwarz
Affiliation:
Queens College of CUNY, Dept. of Physics, Flushing, NY 11367
J. Sokolov
Affiliation:
SUNY at Stony Brook, Dept. of Materials Sci. & Eng., Stony Brook, NY 11974
M. H. Rafailovich
Affiliation:
SUNY at Stony Brook, Dept. of Materials Sci. & Eng., Stony Brook, NY 11974
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Abstract

We report on the results for the diffusion coefficient (D*) of polystyrene (PS) chains near the PS/Silicon interface. The present study employs secondary ion mass spectrometry (SIMS) to examine diffusion from a deuterated marker layer in thin PS films on silicon. The observed SIMS depth profiles are fit to numerical simulations of the diffusion process. The best fit is obtained for a super-linear dependence of D * vs. distance from the silicon wall. A non-trivial time dependence extending over tens of hours is observed for all the models tested.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 543: Symposium W – Dynamics in Small Confining Systems IV , 1998 , 151
Copyright
Copyright © Materials Research Society 1999

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