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Depth Gradients in Porous Silicon: How to Measure Them and How to Avoid Them

Published online by Cambridge University Press:  15 February 2011

M. Thönissen ,
M. G. Berger ,
W. Theiβ ,
S. Hilbrich ,
M. Krüger ,
R. Arens-Fischer ,
S. Billat ,
G. Lerondel  and
H. Lüth
M. Thönissen
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
M. G. Berger
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
W. Theiβ
Affiliation:
RWTH Aachen, I. Physik. Inst., D-52056 Aachen, Germany
S. Hilbrich
Affiliation:
RWTH Aachen, I. Physik. Inst., D-52056 Aachen, Germany
M. Krüger
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
R. Arens-Fischer
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
S. Billat
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
G. Lerondel
Affiliation:
Université J. Fourier, B.p. 87, F-38402 St. Martin d'Hères cedex France
H. Lüth
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
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Abstract

For the formation of single layers and layer systems the depth homogeneity of porous silicon (PS) plays a key role. We have measured qualitatively and quantitatively structural gradients in p-PS layers with increasing layer thicknesses by fitting reflectance spectra in the infrared and by measuring thickness oscillations in the reflectance during the formation of PS layers. These results allow us to give recipes for the formation of PS layers with a homogenous optical thickness in depth.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 431
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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