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Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers
Published online by Cambridge University Press: 10 February 2011
Abstract
We present results of spatially-resolved photoluminescence and Raman measurements on a 200 μm thick GaN layer grown on sapphire by hydride vapor phase epitaxy. Our microphotoluminescence measurements reveal that the peak position of the excitonic and donoracceptor-pair transitions strongly depends on the distance to the substrate interface. We observed a strong blue shift near the interface and discuss the influence of strain, which we quantified by micro-Raman experiments.
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- Copyright © Materials Research Society 1997
References
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