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Diffusion of Arsenic in Single Crystalline CoSi2

Published online by Cambridge University Press:  15 February 2011

A. Pisch ,
J. Cardenas ,
B. G. Svensson  and
C. S. Petersson
A. Pisch
Affiliation:
Royal Institute of Technology, Solid State Electronics P.O.Box E229, S-164 40 Kista-Stockholm, Sweden
J. Cardenas
Affiliation:
Royal Institute of Technology, Solid State Electronics P.O.Box E229, S-164 40 Kista-Stockholm, Sweden
B. G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics P.O.Box E229, S-164 40 Kista-Stockholm, Sweden
C. S. Petersson
Affiliation:
Royal Institute of Technology, Solid State Electronics P.O.Box E229, S-164 40 Kista-Stockholm, Sweden
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Abstract

The lattice diffusion of arsenic in CoSi2 has been studied in the temperature range from 750°C to 950°C. Two types of bulk samples were used: single crystals prepared by a modified Czochralski pulling technique from a radio frequency levitated melt and polycrystals synthesised by quenching from the melt. The latter samples were subsequently annealed in vacuum at 900°C and displayed grain sizes in the millimetre range. Starting from an ion implanted arsenic profile with two different doses (5·1014 and 5·1015 cm−2) the concentration versus depth profiles after annealing at different temperatures and different times were measured using secondary ion mass spectrometry (SIMS). Contrary to previous studies by other authors substantial diffusion has been observed with an activation energy of 3.3 eV and a pre-exponential factor of 7.37 cm2/s for the diffusion coefficient. These values are very close to the self diffusion coefficient of Si in CoSi2 suggesting that the As atoms migrate via thermal vacancies on nearest neighbour lattice sites by a similar type of mechanism as the Si (and Co) atoms. In the high dose implanted polycrystalline samples arsenic precipitation occurred which gives an estimate for the solid solubility in the 1019 atoms/cm3 range at 800 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 51
Copyright
Copyright © Materials Research Society 1996

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References

1. Zaring, C., Gas, P., Svensson, B.G., Östling, M. and Whitlow, H.J., Thin Solid Films 193/194 p.244 (1990)Google Scholar
2. Gas, P., Zaring, C., Svensson, B.G., Östling, M., Whitlow, H.J. and Barge, T., Mat. Res Soc. Proc. Vol.187, p. 131 (1990)Google Scholar
3. Zaring, C., Pisch, A., Cardenas, J., Gas, P. and Svensson, B.G., submitted to J. Appl. Phys. (1995)Google Scholar
4. Thomas, O., Gas, P., Charai, A., LeGoues, F.K., Michel, A., Scilla, G. and d'Heurle, F.M., J. Appl. Phys. 64, p. 2973 (1988)Google Scholar
5. Maex, K., Gosh, G., Delay, L., Probst, V., Lippens, P., Van den hove, L. and De Keersmaecker, R.F., J. Mater. Res 4(5), p. 1209, (1989)Google Scholar
6. Chu, C.L., Technical report No. ICL91-007, Stanford University, CA, USA (1991).Google Scholar
7. Thomas, O., Rouault, A., Madar, R. and Senateur, J. P., Solid State Comm. 55, p. 629 (1985)Google Scholar
8. Ciccariello, J.C., Poize, S. and Gas, P., J. Appl. Phys 67, p. 3315 (1990)Google Scholar
9. Barge, T., Ph.D. thesis, University of Marseille III, France (1993)Google Scholar
10. Barge, T., Gas, P. and d'Heurle, F.M., J. Mater. Res. 10, p. 1134 (1995).Google Scholar