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Direct Nanoscale Observation of Size Effect on Polarization Instability in Pb(Zr,Ti)O3 film capacitors

Published online by Cambridge University Press:  17 March 2011

Igor Stolichnov
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Enrico Colla
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Alexander Tagantsev
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Seungbum Hong
Affiliation:
Nava Setter Ceramic Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
Jeffrey S. Cross
Affiliation:
Fujitsu Laboratories, Ltd., 10-1 Morinosato-wakamiya, Atsugi, 243-0197, Japan
Mineharu Tsukada
Affiliation:
Fujitsu Laboratories, Ltd., 10-1 Morinosato-wakamiya, Atsugi, 243-0197, Japan
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Abstract

Mapping of polarization distributions in Pb(Zr,Ti)O3 ferroelectric capacitors with sizes down to 0.5 × 0.5 μm has been studied using scanning probe microscope (SPM) with detection of piezoelectric response through the top electrode. A well reproducible anomaly in polarization distribution namely elevated polarization at the edges and inverse polarization in the center has been observed for the FeCaps of several μm size. This polarization pattern is found to be insensitive to the poling voltage polarity and voltage stress prehistory but strongly dependent on the FeCAP size. Specifically, the polarization anomaly tends to disappear as the FeCAP size scales down to the submicron range. Tentative interpretation of this phenomenon in terms of strain-induced phase transitions in combination with depolarization effects is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

[1] Sakoda, T., Moise, T., Summerfelt, S., Colombo, L., Xing, G., Gilbert, S., Loke, A., Ma, S., Kavari, R., L. Wills and Amano, J., Jpn. J. Appl. Phys. 40, 2911 (2001).Google Scholar
[2] Alexe, M., Harnagea, C., Hesse, D., and Gösele, U., Appl. Phys. Lett. 79, 242 (2001).Google Scholar
[3] Scott, J., IEICE Transactions on Electronics E81–C, 447 (1998).Google Scholar
[4] Kammerdiner, L., Davenport, T., and Hadnagy, D., Patent US5969935 (1999).Google Scholar
[5] Colla, E., Hong, S., Taylor, D., Tagantsev, A., No, K., and Setter, N., Appl. Phys. Lett. 72, 2763 (1998).Google Scholar
[6] Tagantsev, A., Pertsev, N., Muralt, P., and Setter, N., Phys. Rev. B, 65, 12104 (2001).Google Scholar