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Direct Observations Of Atomic Structures Of Defects In Gan By High Resolution Z-Contrast Stem

Published online by Cambridge University Press:  10 February 2011

Y. Xin ,
S.J. Pennycook ,
N.D. Browning ,
P. D. Nellist ,
S. Sivananthan ,
B. Beaumont ,
J-P Fauriel  and
P. Gibart
Y. Xin
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37381-6031, USA
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37381-6031, USA
N.D. Browning
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA
P. D. Nellist
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE,UK
S. Sivananthan
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA
B. Beaumont
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne, France.
J-P Fauriel
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago. IL 60607-7059, USA CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne, France.
P. Gibart
Affiliation:
CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne, France.
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Abstract

GaN/(0001)Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {10–10} surface. The surfaces of the nanopipe walls are on {10–10} with the terminating layer between the atoms with one bond per pair. In addition, the high resolution Z-contrast image of the prismatic stacking fault confirms the results by conventional HRTEM.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 781
Copyright
Copyright © Materials Research Society 1998

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