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Dislocation-Related Photoluminescence In Strain-Relaxed Si1−xGex. Buffer Layer Structures

Published online by Cambridge University Press:  15 February 2011

Kai Shum ,
P. M. Mooney  and
J. O. Chu
Kai Shum
Affiliation:
Department of Electrical Engineering, The City College of the City University of New York, New York, NY 10031
P. M. Mooney
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
J. O. Chu
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
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Abstract

Low-temperature photoluminescence (PL) spectroscopy was used to study electronic states associated with threading dislocations (D lines) in strain-relaxed Si1−xGex layers. The structures investigated were grown by ultra-high vacuum chemical vapor deposition (UHV/CVD) at 550 °C and consist of an Si(001) substrate followed by a step-wise graded buffer layer followed by a thick uniform composition Si1−xGex layer. Variations in the PL intensity and peak position of the four D lines after isochronal annealing at temperatures between 600 and 800 °C have been measured. We show that the large energy shift of the D1 line is due to a change in the local band-gap energy at the dislocation core due to strain-driven diffusion of Ge away from the dislocation core with an activation energy of 2.4 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 325
Copyright
Copyright © Materials Research Society 1997

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References

1. Ismail, K., Rishton, S., Chu, J.O., Chan, K., Nelson, S.F., and Meyerson, B.S., IEEE Electron Device Lett. EDL-14, 348 (1993).Google Scholar
2. Fitzgerald, E.A., Xie, Y.H., Monroe, D., Silverman, P.J., Kuo, J.M., Kortan, A.R., Thiel, F.A., and Weir, B.B., J. Vac. Sci. Technol. B 10, 1807 (1992).Google Scholar
3. Drozdov, N.A., Patuin, A.A., and Tkachev, V.D., Sov. Phys. JETP Lett. 23, 597 (1976).Google Scholar
4. Higgs, V., Lightowlers, E.C., Norman, C.E., and Knightley, P., Matr. Sci. Forum 83–87, 1309 (1992).Google Scholar
5. Weber, J., Solid State Phenomena 37–38, 13 (1994).Google Scholar
6. Meyerson, B.S., Appl. Phys. Lett., 48, 797 (1986).Google Scholar
7. Tilly, L.P., Mooney, P.M., Chu, J.O. and LeGoues, F.K., Appl. Phys. Lett. 67, 2488 (1995).Google Scholar
8. Boucaud, P., Wu, L., Guedji, C., Julien, F.H., Saines, I., Campidelli, Y., and Garchy, L., J. Appl. Phys. 80, 1414 (1996).Google Scholar
9. Tanaka, K. and Suezawa, M., 7th Intl. Conf. on Shallow Levels in Semiconductors (Amsterdam, 1996).Google Scholar
10. Fukatsu, S., Mera, Y., Inoue, M., Maeda, K., Akiyama, H., and Sakaki, H., Appl. Phys. Lett. 68, 1889 (1996).Google Scholar
11. Batson, P.E., Proc. of the Microscopy Society of America, ed. Bailey, G.W. and Elliman, M.N., 1995, p.1995.Google Scholar
12. Cotrell, A.H. and Bilby, B.A., Proc. Phys. Soc. A62, 49 (1949).Google Scholar