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Disorder Defects Modelling for Some Ternary Crystals

Published online by Cambridge University Press:  21 March 2011

Valeriy G. Voevodin  and
Olga.V. Voevodina
Valeriy G. Voevodin
Affiliation:
Siberian Physico-Technical Institute 1 Revolution sq., 634050, Tomsk, Russia
Olga.V. Voevodina
Affiliation:
Siberian Physico-Technical Institute 1 Revolution sq., 634050, Tomsk, Russia
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Abstract

Absrtact:

The attempt to obtain the data on thermodynamic parameters and equilibrium concentra- tions of disorder defects was made. Quasi-chemical model of the defects formation with allow- ance for Schottky and Frenkel defects was used. Thermodynamic parameters were calculated based on Weiser's technique. Six types of the disorder defects in II-IV-V2 and I-III-VI2 were considered. Used models, approaches and initial parameters give that the greatest concentration (∼ 1019 cm−3) and accordingly the greatest influence on properties of the crystals have defects AB or BA.

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References

REFERENCES

1. Kroger, F.A.. The chemistry of imperfect crystals (North-Holl. Publ. Co, Amsterdam, 1964).Google Scholar
2. Voevodin, V.G., Voevodina, O.V., Ternary compounds A2B4C5; 2 and A1B3C6; 2: Frencel defects concentration, Jpn.J.Appl.Phys. 39, Suppl. 39–1, 402 (2000).Google Scholar
3. Weiser, K., Theoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solutions, J. Phys. Chem. Solids. 7, 118 (1958).Google Scholar
4. Semiconductors A2B4C5; 2 , ed. by Goruynova, N.A., Valov, Yu.A. (Sovetskoe Radio, Moscow, 1974).Google Scholar
5. Pauling, L., Nature of the Chemical Bond (Cornell University Press, New York, 1960).Google Scholar
6. Kittel, C.. Introduction to Solid State Physics (Nauka, Moscow, 1978).Google Scholar
7. Koshel, W.H., Bettini, M., Zone-centred phonons in a1chalcopyrites, Phys. Stat, Sol. (B). 72, 728 (1975).Google Scholar
8. Antropova, E.V., Kopitov, A.I., Poplavnoy, A.S., Phonon spectrum and IR optical properties of CdGeAs2, Optics and spectroscopy. 64, 1285 (1988).Google Scholar
9. Tyuterev, V.G., Skachkov, S.I., On the lattice dynamics of AgGaS2, Il Nuovo Cim. D14, 1091 (1992).Google Scholar
10. Tyuterev, V.G., Skachkov, S.I., Lattice dynamics, thermodynamic and elastic properties of CdGeAs2, Il Nuovo Cim. D14, 1097 (1992).Google Scholar
11. Holah, G.D., Grimsditch, M., Brillouin scattering determination of the elastic modules of Ag- GaS2 and their influence on the analysis of the optical phonon data, J. De Physique. 36, Suppl. 9, C3185 (1975).Google Scholar
12. Grimsditch, M., Holah, G.D., Brillouin scattering and elastic modules of silver thiogallate, Phys. Rev. B. 12, 4377 (1975).Google Scholar
13. Hailing, Tu., Saunders, G.A., Lambson, W.A., Foigelson, R.S., Elastic behaviour of the chal- copyrite CdGeAs2 , J.Phys. C. Solid State Phys. 15, 1399 (1982).Google Scholar
14. Deroliez, P., Fouret, R., Laamyen, A., Hennion, B., Gonzalez, J., Lattice Vibration Studies in Ag- GaSe2 by Neutron Scattering, Cryst. Res. Technol. 31, 785 (1996).Google Scholar
15. Zapol, P., Pandey, R., Atomistic calculations of defects in ZnGeP2 , J. Appl. Phys. 79, 671 (1996).Google Scholar
16. Pandey, R., Ohmer, M.C., Gale, J.D., A theoretical study of native acceptors in CdGaAs2 , J. Phys.: Condens. Matter. 10, 5525 (1998).Google Scholar
17. Poplavnoy, A.S., Dynamics of a lattice and chemical bond in semiconductor compounds II- IV-V2 , Izv. vuzov. Fizika. XXIX, 5 (1986).Google Scholar
18. Berger, L.I., Problems of metallurgy and metal research (Metallurgizdat, Moscow, 1962).Google Scholar
19. Berger, L.I., Balanevskaya, E.A., Thermal expansion, thermal bond and module of an elasticity of some ternary semiconductor compounds of A1B3C6; 2-type, FTT. 6, 1311 (1964).Google Scholar