Hostname: page-component-54dcc4c588-br6xx Total loading time: 0 Render date: 2025-09-17T12:00:38.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

Published online by Cambridge University Press:  10 February 2011

Jae-Won Lee ,
Hyong-Soo Park ,
Yong-Jo Park ,
Myong-Cheol Yoo ,
Tae-Il Kim ,
Hyeon-Soo Kim  and
Geun-Yong Yeom
Jae-Won Lee
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, jaewon@saitgw.sait.Samsung.co.kr
Hyong-Soo Park
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, jaewon@saitgw.sait.Samsung.co.kr
Yong-Jo Park
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, jaewon@saitgw.sait.Samsung.co.kr
Myong-Cheol Yoo
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, jaewon@saitgw.sait.Samsung.co.kr
Tae-Il Kim
Affiliation:
Photonics Lab, Samsung Advanced Institute of Technology, Suwon P.O. Box 111, Korea, jaewon@saitgw.sait.Samsung.co.kr
Hyeon-Soo Kim
Affiliation:
Department of Materials Engineering, Sung Kyun Kwan University, Suwon 440–746, Korea
Geun-Yong Yeom
Affiliation:
Department of Materials Engineering, Sung Kyun Kwan University, Suwon 440–746, Korea
Get access

Abstract

Dry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 373
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74–L76 (1996); Appl. Phys. Lett. 69(26), 4056–4058 (1996)Google Scholar
2. Shul, R.J., McClellan, G.B., Pearton, S.J., Abemathy, C.R., Constantine, C. and Barratt, C., Electron. Lett. 32(15), 1408–1409(1996)Google Scholar
3. Vartuli, C.B., MacKenzie, J.D., Lee, J.W., Abemathy, C.R., Pearton, S.J. and Shul, R.J., J. Appl. Phys. 80(7), 3705–3709(1996)Google Scholar
4. Lin, M.E., Fan, Z.F., Allen, L.H. and Morkoc, H., Appl. Phys. Lett. 64(7), 887–888(1994)Google Scholar
5. Ping, A.T., Schmitz, A.C., Asif Khan, M. and Adesida, I., J. Electron. Mater. 25(5), 825–829(1996)Google Scholar
6. Weast, R.C., CRC Handbook of Chemistry and Physics, 68th Edition, F169–F170(1987–1988)Google Scholar
7. Humphreys, B., Govett, M., MIJ-NSR, 1(28), 1–9 (1996)Google Scholar