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DX Centers and III-V Device Performance

Published online by Cambridge University Press:  16 February 2011

Elias Muñoz-Merino
Elias Muñoz-Merino*
Affiliation:
Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, Madrid, Spain
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Abstract

The properties of deep donor states (DX's centers) in III-V alloys are reviewed in relation to their influence on the device characteristics and limitations. Because of the systematic research being performed on AlGaAs, most of the information presented refers to such material. The electron thermal emission and capture properties of the DX's are then related to the DC and noise characteristics in heterojunction transistors. The optical properties of DX centers indicate a clear difference between unipolar and bipolar device performance at low temperatures. The technical efforts to avoid DX centers will also be described.

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References

REFERENCES

1. Craford, M. G., Stillman, G. E., Rossi, J. A., and Holonyak, N. Jr., Phys. Rev. 168, 867 (1968)10.1103/PhysRev.168.867Google Scholar
2. Lang, D. V., in Deep Centers in Semiconductors, edited by Pantelides, S. T. (Gordon and Breach, New York, 1986), p. 489.Google Scholar
3. Theis, T. N., Inst of Physics Conf Series 95, (1989)Google Scholar
4. Mooney, P. M., J. Appl. Phys. 67, R1, (1990).10.1063/1.345628Google Scholar
5. Bourgoin, J. C., editor, Physics of DX Centers in GaAs Alloys, Sci. Tech. Publications, Liechtenstein, 1990.Google Scholar
6. Calleja, E., Gomez, A., and Munoz, E., Appl. Phys. Lett. 52, 383 (1988).10.1063/1.99473Google Scholar
7. Morgan, T. N., in Defects in Semiconductors 15, edited by Ferenczi, G. (Trans. Tech. Publications, Switzerland, 1989) p. 1079.Google Scholar
8. Chadi, D. J. and Chang, K. J., Phys. Rev. B 39, 10366 (1989).10.1103/PhysRevB.39.10063Google Scholar
9. Bourgoin, J. C. and Mauger, A., Appl. Phys. Lett. 53, 749 (1988)10.1063/1.99821Google Scholar
10. Lifshiftz, N., Jarayaman, A., Logan, R.A, and Card, H. C., Phys. Rev. B21, 670 (1980)10.1103/PhysRevB.21.670Google Scholar
11. Chand, N., Henderson, T., Klem, J., Masselink, W. T., Fisher, R., Chand, Y. C., and Morkoc, H., Phys. Rev. B30, 4481 (1984)10.1103/PhysRevB.30.4481Google Scholar
12. Houng, Y. and Low, T. S., J. Cryst. Growth, 77, 272 (1986)10.1016/0022-0248(86)90311-8Google Scholar
13. Jani, B. El, Kohler, K., Guessan, K. N., Hadj, A. Bel, and Gibart, P., J. Appl. Phys. 63, 4518 (1988)10.1063/1.340149Google Scholar
14. Lavielle, D., Sallese, J. M., Goutiers, B., Dmowski, L., Basmaji, P., Portal, J. C., and Gibart, P., 16th International Symposium on GaAs and Related Compounds, Karuizawa, 1989 Google Scholar
15. Craven, R. A. and Finn, D., J. Appl. Phys. 50, 6334 (1979)10.1063/1.325775Google Scholar
16. Watanabe, M. O., Ahizawa, Y., Sugiyama, N., and Nakanisi, T., Ins. Phys. Conf. Ser. 83, 105 (1987).Google Scholar
17. Theis, T. N., Parker, B. D., Solomon, P. M., and Wright, S. L., Appl. Phys. Lett. 49, 1542 (1986)10.1063/1.97276Google Scholar
18. Dobaczewski, L., Dmochowski, J. E., and Langer, J. M., unpublishedGoogle Scholar
19. Zazoui, M., Feng, S. L., Bourgoin, J. C.,, and Bardeleben, J. von, MRS Fall Meeting, Boston, 1989.Google Scholar
20. Izpura, I., Munoz, E., Garcia, F., and Calleja, E., unpublishedGoogle Scholar
21. Lorek, L., Dambkes, H., Heime, K., Ploog, K., and Weimann, G., IEEE Elecron Device Letters ED–5, 9 (1984)10.1109/EDL.1984.25812Google Scholar
22. Liu, S. M., Das, M. B., Kopp, W., and Morkoc, H., IEEE Electron Dev Let, EDL–6, 453 (1985)10.1109/EDL.1985.26190Google Scholar
23. Kirtley, J. R., Theis, T. N., Mooney, P. M., and Wright, S. L., J. Appl. Phys. 63, 1541 (1988)10.1063/1.339938Google Scholar
24. Tutt, M. N., Pavlidis, D., and Bayraktaroglu, B., 16th Intal. Symp. on GaAs and Related Compounds, Karuizawa, 1989.Google Scholar
25. Izpura, I., Munoz, E., Hill, G., Roberts, J., Pate, M. A., Mistry, P., and Hall, N. Y., Appl. Phys. Lett. 55, 2414 (1989).10.1063/1.102031Google Scholar
26. Chi, J. Y., Holmstrom, R. P. and Salerno, J. P., IEEE Electron Device Letters, EDL–5, 381 (1984) 28.10.1109/EDL.1984.25954Google Scholar
27. Morkoc, H. and Unlu, H., in Semiconductors and Semimetals, vol.24, edited by Dingle, R. (Academic Press Inc. 1987), chapter 2, p. 135.Google Scholar
28. Izpura, I., Munoz, E., Calleja, E., Int. Conf. on the Science and Technology of Defect Control in Semiconductors, Sept. 1989, YokohamaGoogle Scholar
29. Nabity, J. C., Stavola, M., Lopata, J., Dautremont-Smith, W. C., Tu, C. W., and Pearton, S. J., Appl. Phys. Lett. 50, 921 (1987)10.1063/1.97980Google Scholar
30. Ishikawa, T., Yamamoto, T., Kondo, K., Komeno, J. and Shibatomi, A., Inst. Phys. Conf. Ser. 83, 99 (1986)Google Scholar
31. Kobayashi, K., Yamaga, M., Fujimoto, I., and Suzuki, T., Japanese J. Appl. Phys. 28, L1073 (1989)10.1143/JJAP.28.L1073Google Scholar
32. Baba, T., Microelectronic Eng. 4, 195 (1986)10.1016/0167-9317(86)90011-0Google Scholar
33. Bourgoin, J. C., Feng, S. L., Stievenard, D., Letarte, X., Barbier, E., and P.Hirtz, J., Appl. Phys. Lett. 54, 1115 (1989)10.1063/1.100774Google Scholar
34. Campbell, A. C., Dodabalapur, A., Crook, G. E., and Streetman, B. G., Appl. Phys. Lett. 54, 727 (1989)10.1063/1.100874Google Scholar
35. Munoz, E., Calleja, E., Izpura, I. and Garcia, F., unpublishedGoogle Scholar
36. Basmaji, P., Zaouk, A., Gibart, P., Gauthier, D., and Portal, J. C., Appl. Phys. Lett. 54, 1121 (1989)10.1063/1.100775Google Scholar
37. Li, M. F., Yu, P. Y., Shan, W., Hansen, W. and Weber, E. R., Appl. Phys. Lett. 54, 1344 (1989)10.1063/1.100710Google Scholar
38. Zrenner, A., Appl. Phys. Lett., 55, 156 (1989)10.1063/1.102129Google Scholar
39. Moll, N., Hueschen, M. R., and Fisher-Colbrie, A., IEEE ED–35, 679 (1988).Google Scholar
40. Ploog, K., Hauser, M., and Fischer, A., Inst. Phys. Conf. Ser. 91, 27 (1987)Google Scholar
41. Etienne, B. and Thierry-Mieg, V., Appl. Phys. Lett. 52, 1237 (1988)10.1063/1.99167Google Scholar
42. Petroff, P. M., in Semiconductors and Insulators, vol.5 (Gordon and Breach, New York, 1983) p. 307 Google Scholar
43. Lopez, C., Garcia, A., Garcia, F., and Munoz, E., Solid-State Electron. 22, 81 (1979)10.1016/0038-1101(79)90175-8Google Scholar