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Effect of Atomic Bonding on Defect Production in Collision Cascades

Published online by Cambridge University Press:  15 February 2011

K. Nordlund ,
R. S. Averback  and
T. Diaz de la Rubia
K. Nordlund
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, EL 61801, USA
R. S. Averback
Affiliation:
Materials Research Laboratory, University of Illinois, Urbana, EL 61801, USA
T. Diaz de la Rubia
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
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Abstract

We study the mechanisms of damage production during ion irradiation using molecular dynamics simulations of 400 eV -10 keV collision cascades in four different materials. The materials Al, Si, Cu and Ge are contrasted to each other with respect to the mass, melting temperature and crystal structure. The results show that the crystal structure clearly has the strongest effect on the nature of the damage produced, and elucidate how the open crystal structure affects the nature of defects produced in silicon.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 113
Copyright
Copyright © Materials Research Society 1997

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References

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