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Effect of Hydrogenation on the Electrical and Optical Properties of GaSb

Published online by Cambridge University Press:  21 February 2011

P.S. Dutta
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore – 560 012, India
H.L. Bhat
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore – 560 012, India
Vikram Kumar
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi – 110 054, India
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Abstract

The effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimonide bulk single crystals is presented. Plasma exposure gives rise to a layer of defects on the surface. These defects introduce multiple trap levels in the band gap from which a slow emission of carriers is observed during the capacitance - voltage measurements. On removal of the defect layer by controlled etching, the effects of hydrogen passivation are seen. The results of optical measurements indicate that passivation of shallow acceptors is more efficient than that of the donors and in general the passivation efficiency depends on the doping level. Passivation of deep levels and extended defects like grain boundaries and dislocations has also been observed. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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