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The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs

Published online by Cambridge University Press:  15 March 2011

G.Y. Chung ,
C.C. Tin ,
J. R. Williams ,
K. McDonald ,
M. Di Ventra ,
S.T. Pantelides ,
L.C. Feldman  and
R.A. Weller
G.Y. Chung
Affiliation:
Physics Department, Auburn University, AL 36849
C.C. Tin
Affiliation:
Physics Department, Auburn University, AL 36849
J. R. Williams
Affiliation:
Physics Department, Auburn University, AL 36849
K. McDonald
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
M. Di Ventra
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235
S.T. Pantelides
Affiliation:
Also at Oak Ridge National Laboratory, Oak Ridge TN 37831
L.C. Feldman
Affiliation:
Also at Oak Ridge National Laboratory, Oak Ridge TN 37831
R.A. Weller
Affiliation:
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235
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Abstract

Results are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T8.7.1
Copyright
Copyright © Materials Research Society 2000

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References

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