Hostname: page-component-7dd5485656-zklqj Total loading time: 0 Render date: 2025-10-30T18:26:37.846Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Characterisation of Shallow Pre-Amorphised +n junctions in silicon

Published online by Cambridge University Press:  26 February 2011

S. D. Brotherton ,
J. R. Ayres ,
J. B. Clegg  and
B. J. Goldsmith
S. D. Brotherton
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
J. R. Ayres
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
J. B. Clegg
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
B. J. Goldsmith
Affiliation:
Philips Research Laboratories, Redhill, Surrey, England
Get access

Abstract

An examination of Si+ pre-amorphised p+n structures as a function of Si+ implantation energy and solid phase epitaxial regrowth temperature has revealed three different classes of defect all of which may influence the characteristics of the junction. They are point defects responsible for high concentrations of deep level donors, and interstitial dislocation loops both causing leakage current degradation, and excess silicon interstitials leading to enhanced junction movement.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 161
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1]Brotherton, S. D., Gowers, J. P., Young, N.D., Clegg, J. B. and Ayres, J. R.. Jnl. Appl. Phys., 60, 3567 (1986).Google Scholar
[2]Brotherton, S. D., Ayres, J. R., Goldsmith, B. J. and Gill, A.. SPIE Conf. Proc., 797, 26 (1987), (Advanced Processing of Semiconductor Devices Ed. Mukherjee, S. D.).Google Scholar
[3]Brotherton, S. D., Hellon, C. M.. Unpublished.Google Scholar
[4]Ayres, J. R., Brotherton, S. D., Clegg, J. B. and Gill, A.. Jnl. Appl. Phys. Nov. 1987.Google Scholar
[5]Yamada, K., Koshiwagi, M. and Taniguchi., K.Japan Jnl. Appl. Phys. 22–1, 157 (1983).Google Scholar
[6]Shannon, J. M., King, M. J., Goldsmith, B. J. and Clegg, J. B., in Proc. 1st Intl. Symp. on Silicon MBE, edited by Bean, J. C.. (Electrochem. Soc., 85–7, Pennington N.J. 1985) p. 242Google Scholar
[7]Solmi, S., Angelucci, R., Cembali, F., Servidori, M. and Anderle, M., Appl. Phys. Letts, 51, 331, (1987).Google Scholar
[8]Tsai, J. C. C. in VLSI Technology, Edited by Sze, S. M. (McGraw-Hill Book Co. 1983), p. 194Google Scholar
[9]Fahey, P., Dutton, R.W. and Moslehi, M.. Appl. Phys. Letts. 46, 784 (1985).Google Scholar