Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-04T03:39:23.832Z Has data issue: false hasContentIssue false
  • English
  • Français

ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs

Published online by Cambridge University Press:  10 February 2011

M. J. Cich ,
R. Zhao ,
Y. Park ,
P. Specht  and
E. R. Weber
M. J. Cich
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
R. Zhao
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Y. Park
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
P. Specht
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Get access

Abstract

The electrical properties of low temperature MBE grown GaAs (LT-GaAs) in the n-i-n configuration have been studied. The mechanism of current rise in beryllium doped LT-GaAs is found to fit Frenkel-Poole type emission with a barrier height of 0.26 eV. However, this model does not fit undoped LT-GaAs. The breakdown field is considerably higher (up to 5.2* 105 V/cm) for beryllium doped films than undoped films, and depends on both growth temperature and beryllium concentration. Beryllium doping is also found to increase the resistivity of the preannealed films to values > 109 ω-cm.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 129
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Smith, F.W., Calawa, A.R., Chen, Chang-Lee, Mantra, M.J., andMahoney, L.J., IEEE EDL-9, 2, 77 (1988).Google Scholar
2. Specht, P., Jeong, S., Sohn, H., Luysberg, M., Prasad, A., Gebauer, J., Krause-Rehberg, R., Weber, E.R., Mater. Sci. Forum 258–263, 951 (1997).Google Scholar
3. Sze, S.M., Physics of Semiconductor Devices, 2nd ed., (Wiley, New Delhi, 1981), p. 403.Google Scholar
4. Luysberg, M., Sohn, H., Prasad, A., Specht, P., Liliental-Weber, Z., andWeber, E.R., J. Appl. Phys., 83, 561 (1998)Google Scholar
5. Wu, Bin, Verma, Ashish, Gamelin, John, Sohn, Hyunchul, and Wang, Shyh in Low Temperature GaAs and Related Materials, edited by GeraldWitt, L., Calawa, Robert, Mishra, Umesh, and Weber, Eicke, (Mater. Res. Proc. 241, Pittsburg Pennsylvania 1992) p. 51.Google Scholar
6. Verma, A.K., Tu, J., Smith, J.S., Fujioka, H., andWeber, E.R., Appl Phys. Lett 68, 699 (1996).Google Scholar