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Electrical Characterization of Ge Nanocrystals in Oxide Matrix

Published online by Cambridge University Press:  25 May 2011

Ivana Capan
Ruđer Bošković Institute, 10000 Zagreb, Croatia
Maja Buljan
Ruđer Bošković Institute, 10000 Zagreb, Croatia
Tea Misic-Radic
Ruđer Bošković Institute, 10000 Zagreb, Croatia
Branko Pivac
Ruđer Bošković Institute, 10000 Zagreb, Croatia
Nikola Radic
Ruđer Bošković Institute, 10000 Zagreb, Croatia
Joerg Grenzer
Forschungszentrum Dresden-Rossendorf, 01314 Dresden, Germany
Vaclav Holy
Charles University in Prague, 12116 Prague, Czech Republic
S. Levichev
University of Minho, 4710-057 Braga, Portugal
Sigrid Bernstorff
Sincrotrone Trieste, 34012 Basovizza, Italy
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We report on electrical properties in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si–SiO2 interface trapping is dominant for the vacuum annealed films.

Research Article
Copyright © Materials Research Society 2011

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1. Duguay, S., Grob, J. J., Slaoui, A., Le Gall, Y., and Amann-Liess, M., J. Appl. Phys. 97, 104330 (2005).Google Scholar
2. Lee, P. F., Lu, X. B., Dai, J. Y., Chan, H. L. W., Jelenkovic, E., and Tong, K. Y., Nanotechnology 17, 1202 (2006).Google Scholar
3. Wan, Q., Lin, C. L., Liu, W. L., and Wang, T. H., Appl. Phys. Lett. 82, 4708 (2003).Google Scholar
4. Lu, X. B., Lee, P. F., and Dai, J., Appl. Phys. Lett. 86, 203111 (2005).Google Scholar
5. Yang, M., Chen, T. P., Liu, Z., Wong, J. I., Zhang, W. L., Zhang, S., and Liu, Y., J. Appl. Phys. 106, 103701 (2009).Google Scholar
6. Nassiopoulou, A. G., Ioannou-Sougleridis, V., and Travlos, A., Frontiers of Multifunctional Integrated Nanosystems, NATO Science Series Vol. 152 Springer, (2005), pp.277–286.Google Scholar
7. Buljan, M., Grenzer, J., Holý, V., Radić, N., Mišić-Radić, T., Levichev, S., Bernstorff, S., Pivac, B., and Capan, I., Appl. Phys. Lett. 97, 163117 (2010).Google Scholar
8. Dobaczewski, L., Peaker, A. R., and Bonde Nielsen, K., J. Appl. Phys. 96, 4689 (2004).Google Scholar
9. Lin, S. W., Balocco, C., Missous, M., Peaker, A. R., and Song, A. M., Phys. Rev. B 72, 165302 (2005).Google Scholar
10. Antonova, I. V., Volodin, V. A., Neustroev, E. P., Smagulova, S. A., Jedrzejewsi, J., and Balberg, I., J. Appl. Phys. 106, 064306 (2009).Google Scholar
11. Dobaczewski, L., Bernardini, S., Kruszewski, P., Hurley, P. K., Markevich, V. P., Hawkins, I. D., and Peaker, A. R., Appl. Phys. Lett. 92, 242104 (2008).Google Scholar