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Electrical Stabilization of Diamond Mis Interface and Misfets by Ultrahigh-Vacuum Process

Published online by Cambridge University Press:  10 February 2011

Young Yun ,
Tetsuro Maki ,
Hiroyuki Tanaka  and
Takeshi Kobayashi
Young Yun
Affiliation:
Department of Electrical Engineering, Faculty of engineering Science, Osaka University, 1–3 Machikaneyama, Toyonaka, Osaka 560, Japan
Tetsuro Maki
Affiliation:
Department of Electrical Engineering, Faculty of engineering Science, Osaka University, 1–3 Machikaneyama, Toyonaka, Osaka 560, Japan
Hiroyuki Tanaka
Affiliation:
Department of Electrical Engineering, Faculty of engineering Science, Osaka University, 1–3 Machikaneyama, Toyonaka, Osaka 560, Japan
Takeshi Kobayashi
Affiliation:
Department of Electrical Engineering, Faculty of engineering Science, Osaka University, 1–3 Machikaneyama, Toyonaka, Osaka 560, Japan
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Abstract

In order to obtain electrically stabilized MIS interface, a diamond metal-insulator- semiconductor field-effect transistor (MISFET) was prepared by means of reduced-oxygen process including ultrahigh-vacuum (UHV) process, and its electrical properties were closely investigated. According to the results, observed effective mobility (μeff ) was 400 cm2/Vs at room temperature, which is the highest value obtained until now in the diamond FET at room temperature. The transconductance (gm ) and surface state density (Nss ) of the device operation region was 5mS/mm and ∼ 1010/cm2 eV, respectively, which is also comparable with conventional Si MOSFETs with the same gate length (Lg = 30μm).

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References

REFERENCES

1. Gildenblat, G. Sh., Grot, S. A., Hatfield, C. W., and Badzian, A. R., IEEE Electron Device Lett. EDL-12, 37 (1991).Google Scholar
2. Zeisse, C. R., Hewett, C. A., Nguyen, R., Zeidler, J. R., and Wilson, R. G., IEEE Elecron Device Lett. EDL- 12, 602(1991).Google Scholar
3. Yun, Y., Maid, T., and Kobayashi, T., J. AppL Phys. 82, 3422 (1997).Google Scholar
4. Maid, T., Shikama, S., Komori, M., Sakaguchi, Y., Sakuta, K., and Kobayashi, T., Jpn. J. AppL Phys. 31, L1446 (1992).Google Scholar
5. Kawarada, H., Surf. Sci Rep. 26, 205 (1996).Google Scholar
6. Suzuki, S., Otsuka, Y., Maid, T., and Kobayashi, T., Jpn. J. Appl. Phys. 35, L1031 (1996).Google Scholar
7. Yun, Y., Maid, T., and Kobayashi, T., AppL Surf. Sci. 117/118, 570 (1997).Google Scholar
8. Kobayashi, T., Yun, Y., Otsuka, Y. and Maki, T., Diam. Films Technol. 6, 379 (1996).Google Scholar
9. Shirakawa, Y., Anda, Y., Maid, T., and Kobayashi, T., Jpn. J. Appl. Phys. 36, 3414 (1997).Google Scholar