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Electronic and Optical Properties of a-Si:H Films Alloyed with Sulfur

Published online by Cambridge University Press:  16 February 2011

S.L. Wang ,
Z.H. Lin ,
J.M. Viner  and
P.C. Taylor
S.L. Wang
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
Z.H. Lin
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
J.M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

Alloying a-Si:H with small amounts of sulfur (≤ 4 × 1020 cm−3) results in a significant enhancement in the photoconductivity and a suppression of the optically-induced degradation of the photoconductivity (Staebler-Wronski effect). The Magnitudes of the activation energies for conductivity imply that these films remain essentially intrinsic in nature. When the sulfur concentration is increased to about 2 to 3 at. %, the Fermi level rises by about 0.25 eV, a fact that suggests that sulfur may act as a very inefficient dopant in a-Si:H.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 559
Copyright
Copyright © Materials Research Society 1994

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References

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