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Electronic Structures for (Si)m (GaP)n Superlattices

Published online by Cambridge University Press:  22 February 2011

P. J. Lin-Chung
P. J. Lin-Chung*
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375–5000
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Abstract

This paper reports on a tight-binding calculation of the band structures of the Si-GaP superlattice (SL) systems with emphasis on the results of the band gap properties. This calculation finds that the SLs grown onto the [110] or [111] oriented substrate do not produce direct gap materials. On the other hand, some of the [001] oriented SLs become direct gap materials when either an interface (IF) state is created at the P and Si IF, or a confined state in the Si occurs with only Ga and Si atoms forming all the IF.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 589
Copyright
Copyright © Materials Research Society 1991

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References

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