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Emissivity Compensated Pyrometry of the Substrate Surface During Movpe Growth of InxGa1−xAs1−yPy/InP Materials in Rotating Disc Reactors

Published online by Cambridge University Press:  10 February 2011

J. Ramer ,
B. Patel ,
A. Patel ,
V. Boguslavskiy  and
A. Gurary
J. Ramer
Affiliation:
EMCORE Corporation, Somerset NJ, USA.
B. Patel
Affiliation:
EMCORE Corporation, Somerset NJ, USA.
A. Patel
Affiliation:
EMCORE Corporation, Somerset NJ, USA.
V. Boguslavskiy
Affiliation:
EMCORE Corporation, Somerset NJ, USA.
A. Gurary
Affiliation:
EMCORE Corporation, Somerset NJ, USA.
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Abstract

In order to overcome some of the inherent difficulties with applying conventional pyrometry to production scale rotating disc MOVPE reactors, the in-situ technique of emissivity compensated pyrometry has been applied. Due to the extreme temperature sensitivity of epitaxial processes involving InxGa1−xAs1−yPy, this material system provides the optimum proving grounds for this technology. With this temperature measurement technique, we have developed a method for measuring the temperature of the substrate during MOVPE growth in high speed rotating disc reactors that does not require any modification to the reactor hardware. Real world testing, during the growth of complex epitaxial structures involving the highly temperature sensitive InxGa1−xAs1−yPy quaternary, indicates a very strong correlation between the measured temperature of the substrate during growth, and actual epitaxial wafer measurements after growth. This temperature measurement system can be used to maintain the wavelength of the InxGa1−xAs1−yPy quaternary materials within a range of 2 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 309
Copyright
Copyright © Materials Research Society 2000

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