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Epitaxial Lateral Overgrowth of Gallium Arsenide Studied by Synchrotron Topography

Published online by Cambridge University Press:  10 February 2011

R. Rantamäki ,
T. Tuomi ,
Z. R. Zytkiewicz ,
D. Dobosz ,
P. J. Mcnally  and
A. N. Danilewsky
R. Rantamäki
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland.
T. Tuomi
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, FIN-02015 HUT, Finland.
Z. R. Zytkiewicz
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warszawa, Poland
D. Dobosz
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warszawa, Poland
P. J. Mcnally
Affiliation:
Microelectronics Research Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland.
A. N. Danilewsky
Affiliation:
D-79108 Freiburg, Germany.
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Abstract

Synchrotron x-ray topographs of GaAs epitaxial lateral overgrowth (ELO) samples are made both in transmission and reflection geometries. The topographs show that the bending of the ELO layers is visible in most geometries. A simulation of the topographic images is implemented taking into account only the orientational contrast. Simulated back reflection section topographs are in good agreement with the experimental ones. The shape of the lattice planes in an ELO layer is calculated using the simulation data and compared to the measured surface profile of the same ELO stripe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 181
Copyright
Copyright © Materials Research Society 1999

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References

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