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Erbium-Doped A-Si:H Films Fabricated by Standard Pecvd Using Metalorganics

Published online by Cambridge University Press:  10 February 2011

N.A. Feoktistov ,
V.G. Golubev ,
A.V. Medvedev  and
A.B. Pevtsov
N.A. Feoktistov
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia
V.G. Golubev
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia
A.V. Medvedev
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia
A.B. Pevtsov
Affiliation:
Joffe Physico-Teclmical Institute, St.-Petersburg 194021, Russia, alex@pevtsov.spb.su
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Abstract

1·54 jim light-emitting erbium-doped hydrogenated amorphous silicon films have been fabricated by standard low temperature (200 – 250 °C) PE CVD technique. The films were doped with erbium during the deposition by making use of a new fluorine-containing metalorganic compound Er(HFA)3*DME [where HFA=CF3C(O)CHC(O)CF3, DME=CH3OCH2CH2OCH3]. Photoluminescence spectra of the a-Si(Er):H films were studied within the range 0·6–1·7 pm at both 77 K and 295 K. A photoconductivity was also detected. The photo- to dark conductivity ratio was on the order of 103.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 255
Copyright
Copyright © Materials Research Society 1998

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References

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