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Excimer Laser Induced Deposition of Bisrcacuo Htsc Thin Films and Buffer Layers -Depth Profiling by SNMS
Published online by Cambridge University Press: 01 January 1992
Abstract
Secondary Neutrals Mass Spectrometry SNMS was used to investigate interdiffusion processes in laser deposited BiSrCaCuO HTSC thin films on various substrate materials. The in-situ deposition of epitaxial Bi2Sr2Ca1Cu2O8+x films requires a substrate temperature just below the decomposition temperature of the 2212 -phase of BiSrCaCuO. This high substrate temperature of about 850°C seems to be the reason for interdiffusion processes of BiSrCaCuO films and MgO(100), YSZ(100) and Si(100) with YSZ or SrTiO3 buffer layers as substrate materials. Therefore, Tc(R=0) of BiSrCaCuO films on silicon with buffer layer is not higher than 70 K at present. SNMS depth profiling gives a more detailed insight into interdiffusion phenomena than other analytical techniques.
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- Copyright © Materials Research Society 1993