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Excimer Laser-Induced Deposition of InP and Indium-Oxide Films

Published online by Cambridge University Press:  21 February 2011

V. M. Donnelly ,
M. Geva ,
J. Long  and
R. F. Karlicek
V. M. Donnelly
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
M. Geva
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
J. Long
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
R. F. Karlicek
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

InP and In-oxide films have been deposited on quartz, GaAs, and InP substrates by excimer laser-induced photodecomposition of (CH3)3InP(CH3)3 and P(CH3)3 vapors at 193 nm. The oxide film refractive index and stoichiometry are close to In2O3. Phosphorus incorporation in the films was greatly enhanced by focusing the laser beam to promote multiple-photon dissociation processes. These conditions also lead to enhanced carbon inclusion in the films, due to formation of species such as CH and CH2 in the gas phase. However, this carbon inclusion could be suppressed by focusing the beam onto the surface at normal incidence. In the irradiated zone InP could be deposited with P(CH3)3-to-(CH3)3InP(CH3)3 ratios of only ∼1:1. The technique offers several potential advantages over conventional metal-organic chemical vapor deposition (MOCVD), including lower temperature, enhanced rates, safer gases, and threedimensional film composition control.

Strong atomic In emission is observed in the gas-phase above the depositing film, due to a multiple photon dissociation process. Gasphase fluorescence from P, CH, and C was also observed. These emissions give insight into the photodecomposition mechanism and also serve as a monitor of metal-organic precursor concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 73
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

[1] Deutsch, T. F., Erlich, D. J., and Osgood, R. M. Jr., Appl. Phys. Lett. 35, 175 (1979).Google Scholar
[2] Erlich, D. J., Deutsch, T. F., and Osgood, R. M. Jr., in Laser and Electron Beam Processing of Materials, ed. White, C. W. and Peercy, P. S., Academic Press 1980.Google Scholar
[3] Solanki, R., Boyer, P. K., and Collins, G. J., Appl. Phys. Lett. 41, 1048 (1982).CrossRefGoogle Scholar
[4] Boyer, P. K., Roche, G. A., Ritchie, W. H., and Collins, G. J., Appl. Phys. Lett. 40, 716 (1982).CrossRefGoogle Scholar
[5] Boyer, P. K., Roche, G. A., and Collins, G. J., J. Electrochem. Soc., in press.Google Scholar
[6](a) Baranauskas, V., Mammana, C.I.Z., Klinger, R. E., and Greene, J. E., Appl. Phys. Lett. 36, 930 (1980);Google Scholar
[6](b) Mishima, Y., Hirose, M., Osaka, Y., Nagamine, K., Ashida, Y., Kitagawa, N., and Isogaya, K., Japn. J. Appl. Phys. 22, L46 (1983).Google Scholar
[7] Aylett, M. R. and Haigh, J., Materials Research Society Symposium, Boston, MA, November 1982, paper 15.4.Google Scholar
[8] Krings, A., and Beneking, H., Materials Research Society Symposium, Boston, MA, November 1982, paper 16.2.Google Scholar
[9] Donnelly, V. M. and Karlicek, R. F., J. Appl. Phys. 53, 6399 (1982).Google Scholar
[10] Smith, G. P. and Patrick, R., Int. J. Chem. Kinetics, 15, 167 (1983).CrossRefGoogle Scholar
[11] Stull, D. R. and Sinke, G. C., Thermodynamic Properties of the Elements, American Chemical Society, Wash. DC, 1956.Google Scholar
[12] Stull, D. R., ed., JANAF Thermochemical Tables, Natl. Bur. Standard, 1971.Google Scholar
[13] Meggers, W. F. and Murphy, R. J., J. Res. Natl. Bur. Stand. 48, 334 (1952).Google Scholar
[14] Döbele, H. F. and Rückle, B., Plasma Phys. 24, 1419 (1982).Google Scholar
[15](a) Chatterjee, A. K., Faktor, M. M., Moss, R. H., and White, E. A. D., Intl Meeting on the Relationship Between Epitaxial Growth Conditions and the Properties of Semiconductor Epitaxial Layers, Perpignan, France, 1982;Google Scholar
[15](b) Moss, R. H. and Evans, J. S., J. Crystal Growth 55, 129 (1981).Google Scholar