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Experimental Characterization of frequency-depend electrical parameters of On-Chip Interconnects

Published online by Cambridge University Press:  19 November 2013

Diego M. Cortés Hernández
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE) Luis Enrique Erro No. 1, Sta. María Tonanzintla, Puebla, C.P. 72000, Méxicodmcortes@inaoep.mx, mlinares@inaoep.mx, reydezel@inaoep.mx
Mónico Linares Aranda
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE) Luis Enrique Erro No. 1, Sta. María Tonanzintla, Puebla, C.P. 72000, Méxicodmcortes@inaoep.mx, mlinares@inaoep.mx, reydezel@inaoep.mx
Reydezel Torres Torres
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE) Luis Enrique Erro No. 1, Sta. María Tonanzintla, Puebla, C.P. 72000, Méxicodmcortes@inaoep.mx, mlinares@inaoep.mx, reydezel@inaoep.mx
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Abstract

An exhaustive analysis of the frequency-dependent series resistance associated with the on-chip interconnects is presented. This analysis allows the identification of the regions where the resistance curves present different trending due to variations in the current distribution. Furthermore, it is explained the apparent discrepancy of experimental curves with the well-known square-root-of-frequency models for the resistance considering the skin-effect. Measurement results up to 40 GHz show that models involving terms proportional to the square root of frequency are valid provided that the section of the interconnect where the current is flowing is appropriately represented.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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