Hostname: page-component-594f858ff7-hf9kg Total loading time: 0 Render date: 2023-06-09T21:12:14.738Z Has data issue: false Feature Flags: { "corePageComponentGetUserInfoFromSharedSession": true, "coreDisableEcommerce": false, "corePageComponentUseShareaholicInsteadOfAddThis": true, "coreDisableSocialShare": false, "useRatesEcommerce": true } hasContentIssue false

Fabrication of High-Resolution Nuclear Detectors Using 4H-SiC n-type Epitaxial Layers

Published online by Cambridge University Press:  13 December 2013

Kelvin J. Zavalla
Department of Electrical Engineering, 301 Main Street, University of South Carolina, Columbia, SC 29208, U.S.A.
Sandeep K. Chaudhuri
Department of Electrical Engineering, 301 Main Street, University of South Carolina, Columbia, SC 29208, U.S.A.
Krishna C. Mandal*
Department of Electrical Engineering, 301 Main Street, University of South Carolina, Columbia, SC 29208, U.S.A.
Get access


High resolution Schottky barrier detectors for alpha particles have been fabricated on 20 μm n-type 4H-SiC epitaxial layers. Schottky barrier contact structure was accomplished by deposition of 10 nm nickel on the Si face of the epilayers. The detectors were characterized for structural, electrical, and spectroscopic properties. Scanning electron microscopy and Nomarski optical microscopy revealed a micropipe density lower than 1 cm-2. The current-voltage (I-V) characteristics of the device exhibited very low leakage current of the order of 6.5 pA at an operating bias of 90 V. C-V measurements revealed a typical effective doping concentrations of 2.4 × 1014 cm-3 in these epilayers. The detectors were evaluated for alpha particles detection using a 241Am source. An energy resolution of ∼0.98% for 5.48 MeV alpha particles was observed. The separate contribution of charge carrier drift and diffusion to the total charge collection efficiency has been calculated in these detectors following a drift-diffusion model. Detailed electronic noise analysis in terms of equivalent noise charge (ENC) was carried out to study the effect of various noise components that contribute to the total electronic noise in the detection system. Effect of shaping time, presence of source and bias on the ENC has been studied in details.

Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)



Ruddy, F. H., Seidel, J. G., Chen, H., Dulloo, A. R., and Ryu, S-H., “High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors,” IEEE Trans. Nucl. Sci., vol. 53, no. 3, pp. 1713–1718, June , 2006 CrossRefGoogle Scholar
Bertuccio, G. and Casiraghi, R., “Study of silicon carbide for X-ray detection and spectroscopy,” IEEE Trans. Nucl. Sci., vol. 50, no. 1, pp. 175185, Feb, 2003.CrossRefGoogle Scholar
Chaudhuri, S. K., Krishna, R. M., Zavalla, K. J., and Mandal, K. C., “Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles,” Nucl. Instrum. Methods Phys. Res. A, vol. 701, pp. 214220, Nov, 2012.CrossRefGoogle Scholar
Dulloo, A. R., Ruddy, F. H., Seidel, J. G., Adams, J. M., Nico, J. S., and Gilliam, D. M., “The thermal neutron response of miniature silicon carbide semiconductor detectors,” Nucl. Instrum. Methods Phys. Res. A, vol. 498, no. 1-3, pp. 415423, Feb, 2003.CrossRefGoogle Scholar
Ivanov, A. M., Kalinina, E. V., Konstantinova, A. O., Onushkin, G. A., Strokan, N. B., Kholuyanov, G. F., and Hallén, A., “High-resolution short range ion detectors based on 4H-SiC films,” Technical Physics Letters, vol. 30, no. 7, pp. 575577, Jan, 2004.CrossRefGoogle Scholar
Ha, J. H., Kang, S. M., Park, S. H., Kim, H. S., Lee, N. H., Song, T-Y., “A self-biased neutron detector based on an SiC semiconductor for a harsh environment,” Appl. Rad. Isotopes, vol. 67, no. 7-8, pp. 12041207, Jul-Aug, 2009.CrossRefGoogle ScholarPubMed
Chaudhuri, S. K., Zavalla, K. J., and Mandal, K. C., “Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach,” Appl. Phys. Lett., vol. 102, no. 3, pp. 031109031113, Jan, 2013.CrossRefGoogle Scholar
Bertuccio, G. and Pullia, A., “A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors,” Rev. Sci. Instrum., vol. 64, no. 11, pp. 32943298, Nov, 1993.CrossRefGoogle Scholar
Rhoderick, E. H., Williams, R.H., Metal-Semiconductor Contacts, Clarendo, Oxford, 1988.
Breese, M. B. H., “A theory of ion beam induced charge collection,” J. Appl. Phys., vol. 74, no. 6, pp. 3789–3799, Sep , 1993.CrossRefGoogle Scholar
Ziegler, J. F., Biersack, J., Littmark, U., The Stopping and Range of Ions in Matter, Pergamon Press (1985).CrossRef