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The Farthest Reaches of a-Si,Ge:H,F Parameter Space… Where no One Has Gone Before

Published online by Cambridge University Press:  21 February 2011

P.A. Morin ,
N.W. Wang  and
S. Wagner
P.A. Morin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA
N.W. Wang
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA
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Abstract

We report the deposition parameters for optimized a-Si,Ge:H,F alloys in the range of optical (Taue) gap of 1.22eV to 1.65eV. These deposition parameters were optimized using the photosensitivity and initial defect density as figures of merit. We observe two distinct regimes of film growth rate, dependent on the choice of source gases. Growth from fluoride source gases results in a growth rate of less than 0.6 Ås--1. Growth from a mixture of fluorides and silane gives a range of growth rates from 2 Ås-l to 5.5Ås1. Alloys in both regimes display the low defect densities and the high photosensitivities required for devices.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 523
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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