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The Formation and Annealing of Amorphous Layers of Al2O3

Published online by Cambridge University Press:  28 February 2011

G. C. Farlow ,
P. S. Sklad ,
C. W. White ,
C. J. McHargue  and
B. R. Appleton
G. C. Farlow
Affiliation:
Wright State University, Dayton, OH
P. S. Sklad
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Metals and Ceramics Divison, ORNL
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Solid State Division, ORNL
C. J. McHargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Metals and Ceramics Divison, ORNL
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Solid State Division, ORNL
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Abstract

The critical dose for formation of an amorphous layer of Al2O3 by ion irradiation at 77 K has been determined. It is found to lie between 2 and 3 × 1015/cm2 if the sample is irradiated near the <0001> axis of the substrate and is found to lie in the neighborhood of 2 × 1016/cm2 if the irradiation is near the <1210> axis. The amorphous layers are found to recrystallize epitaxially if annealed at 1190 degrees C and to form a metastable microstructure upon annealing at 800 degrees C.

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References

[1] Matzke, Hj. and Whitton, J. L., Can J. Phys. 44, 995 (1966).Google Scholar
[2] Wefers, K. and Bell, G. M., Technical Report no. 19, Alcoa Research Labs, Pittsburgh, Pa., p.43 (1972).Google Scholar
[3] Freiser, R. F., J. Electrochemical Soc. 113 357 (1966),Google Scholar
Appl. Spectrosc. 29 185 (1975).Google Scholar
[4] Brueesch, P., Koetz, R., Neff, H., and Pietronero, L., Phys. Rev. B29 4691 (1984).Google Scholar
[5] Jeck, C. and Kelly, R., J. Phys. Chem. Sol. 30 465 (1969).Google Scholar
[6] Naguib, H. M., Singleton, J. F., Grant, W. A. and Carter, G., J. Mat. Sci. 8 1633 (1973).Google Scholar
[7] Rechtin, M. D., Rad Eff. 42 129 (1979).CrossRefGoogle Scholar
[8] Naguib, H. M., and Kelly, R., Rad. Eff. 25 1 (1975).CrossRefGoogle Scholar
[9] McHargue, C. J., Naramoto, H., Appleton, B. R., White, C. W., Williams, J. M., Sklad, P. S., and Angellini, M. P., in Emerging Process and Methods for High Technology Ceramics, (Plenum Publishing Co., New York, (1984) pp 519–532.CrossRefGoogle Scholar
[10] Naramoto, H., White, C. W., Williams, J. M., McHargue, C. J., Holland, O. W., Abraham, M. M., and Appleton, B. R., Nucl Instr. and Meth. 201 /202, 1159 (1983).Google Scholar
[11] Naramoto, H., White, C. W., Williams, J. M., McHargue, C. J., Holland, O. W., Abraham, M. M., and Appleton, B. R., J. App. Phys. 54, 683 (1983).Google Scholar
[12] Burnet, P. J. and Page, T. F., J. Mat. Sci. 19, 845 (1984).Google Scholar
[13] Hioki, T. A., Itoh, A., Nodra, S., Doi, H., Kawamoto, J., Kamigiatoa, O., Nucl. Inst. and Meth. B7 /8, 521 (1985).CrossRefGoogle Scholar
[14] White, C. W., Farlow, G. C., McHargue, C. J., Sklad, P. S., Angellini, M. P., Appleton, B. R., Nucl. Instr. and Meth. B7 /8, (1985).Google Scholar
[15] McHargue, C. J., Farlow, G. C., White, C. W., Williams, J. M., Appleton, B. R., Naramoto, H., Mat. Sci and Eng. 69 541 (1985).Google Scholar
[16] Burnett, P. J. and Page, T. F. J. Mat. Sci 19, 3524 (1985).Google Scholar