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Formation of High Quality Si1−xGex/Si Heterostructures by Selective-Area Mbe Growth

Published online by Cambridge University Press:  28 February 2011

Eiichi Murakami ,
Akio Nishida ,
Hiroyuki Etoh ,
Kiyokazu Nakagawa  and
Masanobu Miyao
Eiichi Murakami
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Akio Nishida
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Hiroyuki Etoh
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Kiyokazu Nakagawa
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Masanobu Miyao
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
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Abstract

Selective-area MBE growth of Si1−xGex film is examined using a Si substrate partially covered with SiO2 film. Elimination of misfit dislocations is observed by TEM. Two possible mechanisms in this elimination, limitation of the lateral extension of misfit dislocations, and partial relaxation of the strain at the SiO2 pattern edge, are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 57
Copyright
Copyright © Materials Research Society 1990

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References

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