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Growth Condition Dependence Of Rheed Pattern From GaAs (111)BSurface

Published online by Cambridge University Press:  21 February 2011

K. Yang ,
W. Li ,
A. P. Taylor ,
Q.-F. Xiao ,
L. J. Schowalter ,
B. K. Laurich  and
D. L. Smith
K. Yang
Affiliation:
Center of Integrated Electronics and Department of Physics, Rensselaer Polytechnic Institute, Troy NY 12180
W. Li
Affiliation:
Center of Integrated Electronics and Department of Physics, Rensselaer Polytechnic Institute, Troy NY 12180
A. P. Taylor
Affiliation:
Center of Integrated Electronics and Department of Physics, Rensselaer Polytechnic Institute, Troy NY 12180
Q.-F. Xiao
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
L. J. Schowalter
Affiliation:
Center of Integrated Electronics and Department of Physics, Rensselaer Polytechnic Institute, Troy NY 12180
B. K. Laurich
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
D. L. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

A 3-dimensional phase diagram is introduced to describe the dependence ofthe RHEED pattern from GaAs(111)B surface on growth conditions. The 2×2,transitional(1×1), and √19×,√19 surface reconstructions correspond todifferent zones in the phase diagram. A equation is given for the planesthat separate these zones, which fit experimental data well. Homoepitaxialfilms on GaAs(111)B grown in the 2×2 region generally have bad crystalquality as determined by the ion channeling, and growth in the √19×√19region generally yields rough surface morphology. At higher substratetemperatures (∼ 650 °C), featureless films with minimum ion channelingyields of less than 4% are achieved.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 261
Copyright
Copyright © Materials Research Society 1992

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References

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