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Growth of Epitaxial Silicon Carbide on Silicon by Rapid Thermal LPCVD
Published online by Cambridge University Press: 28 February 2011
Abstract
This paper describes the growth of epitaxially aligned SiC on < 111 > and < 100 > silicon substrates at 970°C, using rapid thermal LPCVD. A growth mechanism comprising carbonation of silane adspecies has been deduced.
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- Copyright © Materials Research Society 1991