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Growth of Epitaxial Silicon Carbide on Silicon by Rapid Thermal LPCVD

Published online by Cambridge University Press:  28 February 2011

F.H. Ruddell
Affiliation:
The Institute of Advanced Microelectronics, Department of Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, Northern Ireland, BT9 5AH, U.K
B.M. Armstrong
Affiliation:
The Institute of Advanced Microelectronics, Department of Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, Northern Ireland, BT9 5AH, U.K
H.S. Gamble
Affiliation:
The Institute of Advanced Microelectronics, Department of Electronic Engineering, The Queen's University of Belfast, Ashby Building, Stranmillis Road, Belfast, Northern Ireland, BT9 5AH, U.K
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Abstract

This paper describes the growth of epitaxially aligned SiC on < 111 > and < 100 > silicon substrates at 970°C, using rapid thermal LPCVD. A growth mechanism comprising carbonation of silane adspecies has been deduced.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

1. Sugii, T. et al. , IEEE Elect. Dev. Lett. 9, 87 (1988).Google Scholar
2. Ruddell, F.H. et al. , Mat. Res. Soc. Symp. Proc. 198, 553 (1990).Google Scholar
3. Montgomery, J.H. et al. , Microelectronics Journal 21, 29 (1990).Google Scholar
4. Mitchell, S.J.N. et al. , Mat. Res. Soc. Symp. Proc. 182, 35 (1990).Google Scholar
5. Ghidini, G. and Smith, F.W., J. Electrochem. Soc. 131, 2924 (1984).Google Scholar
6. Stinespring, C.D. and Wormhoudt, J.C., J. Cryst. Growth 87, 481 (1988).Google Scholar