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Growth of Lattice-Matched ZnSe-ZnS Strained-Layer Superlattices Onto GaAs as An Alternative to ZnSSe Alloys

Published online by Cambridge University Press:  21 February 2011

H. Oniyama ,
S. Yamaga  and
A. Yoshikawa
H. Oniyama
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Chiba 260
S. Yamaga
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Chiba 260
A. Yoshikawa
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Chiba University, 1-33, Yayoi-cho, Chiba 260
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Abstract

This paper describes the results of the first attempt to reduce misfit dislocations in epilayers of a wide bandgap II-VI semiconductor on GaAs substrates by utilizing the ZnSe-ZnS strained-layer superlattice (SLS) structure. From a theoretical calculation, SLSs consisting of a 200A-ZnSe and a IOA-ZnS layer in one period can be grown as lattice-matched films to GaAs substrates. It has been found from the photoluminescence measurements and electron-beam-induced-current (EBIC) image observations that the generation of misfit dislocations can be markedly reduced, as expected.

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References

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