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Heterogeneous Kinetics of The Chemical Vapor Deposition of Silicon Carbide From Methyltrichlorosilane

Published online by Cambridge University Press:  22 February 2011

George D. Papasouliotis  and
Stratis V. Sotirchos
George D. Papasouliotis
Affiliation:
Department of Chemical Engineering, University of Rochester, Rochester, NY 14627
Stratis V. Sotirchos
Affiliation:
Department of Chemical Engineering, University of Rochester, Rochester, NY 14627
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Abstract

We examine the dynamic behavior of a heterogeneous reaction model for the chemical vapor deposition of carbon, silicon, and silicon carbide from the precursors generated by the thermal decomposition of methyltrichlorosilane (MTS, CH3SiCl3 ). All reactions are treated as reversible in order to account for the strong inhibitory effect of the reaction by–products on the deposition process that was observed in our experiments and in other studies. The equilibrium constants of the adsorption steps of the reactions are treated as model parameters, and those of the other reactions are calculated from the thermodynamic constants of a set of overall deposition reactions. Results are presented on the influence of the various model parameters on the reaction rate, the stoichiometry of the deposit, and the variation of these quantities with the distance in a plug flow deposition reactor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 111
Copyright
Copyright © Materials Research Society 1994

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