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High Resolution Transmission Electron Microscope Study of UHV Deposited Titanium Thin Films on (001), (III) and (011)Si

Published online by Cambridge University Press:  21 February 2011

M. H. Wang  and
L. J. Chen
M. H. Wang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

High resolution transmission electron microscopy has been applied to study the formation of amorphous interlayers by solid-state diffusion in ultrahigh vacuum deposited Ti thin films on (001), (111) and (011)Si

The interface structures of as deposited and annealed samples were examined. The disordered regions at the a-interlayer/c-Si interfaces were found to be most and least extensive in (011) and (111) samples, respectively. Growth behaviors of a-interlayers are described. The amorphization appeared to be initiated at the grain boundaries of Ti thin films. Ti5 Si3 was identified to be the phase formed at the initial stage of the interfacial reactions by HREM in conjunction with the optical diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 117
Copyright
Copyright © Materials Research Society 1990

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