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Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon

Published online by Cambridge University Press:  26 February 2011

J. M. Trombetta  and
G. D. Watkins
J. M. Trombetta
Affiliation:
Department of Physics, Lehigh University Bethlehem, PA 18015, USA
G. D. Watkins
Affiliation:
Department of Physics, Lehigh University Bethlehem, PA 18015, USA
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Abstract

The Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 93
Copyright
Copyright © Materials Research Society 1988

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References

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