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Impact of the Aggressive Scaling on the Performance of FinFETs: the Role of a Single Dopant in the Channel

Published online by Cambridge University Press:  18 July 2013

Manuel Aldegunde  and
Antonio Martinez
Manuel Aldegunde
Affiliation:
College of Engineering, Swansea University, Swansea SA2 8PP, U.K.
Antonio Martinez
Affiliation:
College of Engineering, Swansea University, Swansea SA2 8PP, U.K.
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Abstract

Non-equilibrium Green’s functions (NEGF) simulations are carried out to determine the impact of an unintentional dopant in the middle of the channel of a FinFET. We consider two different geometries scaled according to the ITRS and two different types of dopants, donors and acceptors. We show that there is a degradation of the subthreshold characteristics with the scaling of the smooth device and also a stronger impact of the stray dopants in the middle of the channel, with variations up to 32% in the current in on-state conditions.

Keywords

devicesdopantsimulation

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 35 - 40
Copyright
Copyright © Materials Research Society 2013 

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References

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