Hostname: page-component-7f64f4797f-9h5t2 Total loading time: 0 Render date: 2025-11-04T14:54:46.933Z Has data issue: false hasContentIssue false
  • English
  • Français

The Importance of the Fringing Field Surrounding a Tem Foil to the Quantification of Phase Contrast at a P-N Junction

Published online by Cambridge University Press:  10 February 2011

R. E. Dunin-Borkowski  and
W. O. Saxton
R. E. Dunin-Borkowski
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
W. O. Saxton
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, UK
Get access

Abstract

The space charge contribution to the electrostatic potential both inside and outside a dielectric slab containing a p-n junction is calculated using classical electrostatics, with particular reference to the use of phase contrast techniques in transmission electron microscopy for the characterisation of the carrier distributions present at such layers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 466: Symposium G – Atomic Resolution Microscopy of Surfaces and Interfaces , 1996 , 73
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Tonomura, A., Rev. Mod. Phys. 59, 639 (1987).Google Scholar
2. Ross, F.M., and Stobbs, W.M., Phil. Mag. A 63, 37 (1991).Google Scholar
3. Vanzi, M., Optik 68, 319(1984).Google Scholar
4. Pozzi, G., J. Phys. D 29, 1807 (1996).Google Scholar
5. Dunin-Borkowski, R.E., Saxton, W.O. and Stobbs, W.M., Acta Cryst. A 52, 705 (1996).Google Scholar
6. McCartney, M.R., Smith, D.J., Huil, R., Bean, J.C., Voelkl, E. and Frost, B., Appl. Phys. Lett. 65, 2603 (1994).Google Scholar
7. Frabboni, S., Matteucci, G., Pozzi, G. and Vanzi, M., Phys. Rev. Lett. 55, 2196 (1985).Google Scholar
8. O'Keeffe, M. and Spence, J.C.H., Acta Cryst. A 50, 33 (1994).Google Scholar
9. Dunin-Borkowski, R.E. and Saxton, W.O., submitted to Acta Cryst. A (1996).Google Scholar
10. Sze, S.M., Semiconductor Devices Physics and Technology (John Wiley and Sons, 1985).Google Scholar
11. Reimer, L., Transmission Electron Microscopy (Springer-Verlag, 1984), p. 57.Google Scholar
12. Dunin-Borkowski, R.E. and Saxton, W.O., in preparation.Google Scholar