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Improved Resolution in A P-I-N Image Sensor by Changing the Structure of the Doped Layers

Published online by Cambridge University Press:  17 March 2011

M. Vieira ,
M. Fernandes ,
J. Martins ,
P. Louro ,
A. Maçarico ,
R. Schwarz  and
M. Schubert
M. Vieira
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Email: mv@isel.pt
M. Fernandes
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Email: mv@isel.pt
J. Martins
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Email: mv@isel.pt
P. Louro
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Email: mv@isel.pt
A. Maçarico
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Email: mv@isel.pt
R. Schwarz
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Email: mv@isel.pt
M. Schubert
Affiliation:
Institut fur Physikalische Elektronik, Universitat Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
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Abstract

An amorphous ZnO/p-i-n/Al imager that uses a small-signal scanning beam to read out the short circuit current signal is presented. An analysis of the image geometric distortion, restoration, and enhancement is performed. A simple image-processing algorithm is used to recover main features of projected images. Modifications of the transducer structure are proposed for improving the sensor performance.The effect of the doped layers and image intensity on the sensor output characteristics are analysed. Results show that a trade-off between the sensor structure and contact geometry is needed for a correct read-out. Algorithms and tools are proposed for image analysis.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A14.2
Copyright
Copyright © Materials Research Society 2000

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References

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