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Impurity Diffusion, Crystallization And Phase Separation In Amorphous Silicon.

Published online by Cambridge University Press:  26 February 2011

R.G. Elliman ,
J.M. Poate ,
J.S. Williams ,
J.M. Gibson ,
D.C. Jacobson  and
D.K. Sood
R.G. Elliman
Affiliation:
CSIRO Chemical Physics, P.O. Box 160, Clayton, 3168, Australia.
J.M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J., U.S.A.
J.S. Williams
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia.
J.M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J., U.S.A.
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J., U.S.A.
D.K. Sood
Affiliation:
RMIT Microelectronics Technology Centre, Melbourne, Australia.
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Abstract

Diffusion, crystallization and phase separation processes in indium implanted amorphous silicon are examined for low temperature annealing (600°C). Both diffusion and crystallization are shown to be extremely sensitive to the indium concentration. Diffusion coefficients more than 10 orders of magnitude higher than tracer diffusion coefficients in crystalline silicon are measured, and amorphous to crystalline silicon transitions at temperatures as low as 350°C are reported. Phase separation is also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 389
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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