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Indentation Load Relaxation Studies of Thin Film-Substrate Systems

Published online by Cambridge University Press:  25 February 2011

D. Stone ,
W. Lafontaine ,
S. Ruoff ,
S.-P. Hannula ,
B. Yost  and
Che-Yu Li
D. Stone
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
W. Lafontaine
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
S. Ruoff
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
S.-P. Hannula
Affiliation:
Metallurgy Laboratory, Technical Research Centre of Finland, SF-02150 Espoo, Finland
B. Yost
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
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Abstract

Results from indentation load relaxation (ILR) tests on thin film-substrate systems are reported. In the case of a 1 pum aluminum film on silicon, the data can be interpreted as reflecting both the properties of the film and the interface between film and substrate. Data from a 37μm TiN film on 304 SS are believed to reflect the combined behavior of the film and substrate.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 72: Symposium G – Electronic Packaging Materials Science II , 1986 , 127
Copyright
Copyright © Materials Research Society 1986

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References

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