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Influence of Doping on the Lattice Dynamics of Gallium Nitride

Published online by Cambridge University Press:  15 February 2011

A. Kaschner ,
H. Siegle ,
A. Hoffmann ,
C. Thomsen ,
U. Birkle ,
S. Einfeldt  and
D. Hommel
A. Kaschner
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
H. Siegle
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
C. Thomsen
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
U. Birkle
Affiliation:
Institut für Festkörperphysik, FB 1, Univ. Bremen, Kufsteiner Str. NW 1, 28359 Bremen, Germany
S. Einfeldt
Affiliation:
Institut für Festkörperphysik, FB 1, Univ. Bremen, Kufsteiner Str. NW 1, 28359 Bremen, Germany
D. Hommel
Affiliation:
Institut für Festkörperphysik, FB 1, Univ. Bremen, Kufsteiner Str. NW 1, 28359 Bremen, Germany
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Abstract

We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm-1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.57
Copyright
Copyright © Materials Research Society 1999

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