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In-Situ Growth of Three-Dimensionally Confined Structures on Patterned GaAs (111)B Substrates

Published online by Cambridge University Press:  25 February 2011

K. C. Rajkumar ,
K. Kaviani ,
J. Chen ,
P. Chen ,
A. Madhukar  and
D. H. Rich
K. C. Rajkumar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA90089
K. Kaviani
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA90089
J. Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA90089
P. Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA90089
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA90089
D. H. Rich
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA90089
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Abstract

The potential of realizing quantum box structures via in-situ molecular beam epitaxical growth on the (111)B face of GaAs is explored. Growth is carried out on patterned (111)3B substrates with an array of truncated triangular pyramidal mesas. The mesa tops with arbitrarily small areal dimensions are used as templates for quantum box realization. Under appropriate conditions of growth along with the attendant interfacet migration, a mesa top growth profile characterized by monotonically shrinking lateral dimensions resulting in 'pinch-off is achieved.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 163
Copyright
Copyright © Materials Research Society 1992

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References

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