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Interface Roughness and X-Ray Reflectivity of Amorphous Semiconductor Multilayers

Published online by Cambridge University Press:  25 February 2011

P. D. Persans ,
A. F. Ruppert ,
V. Pantojas ,
K. Liang ,
G. Hughes  and
B. Abeles
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY
A. F. Ruppert
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
V. Pantojas
Affiliation:
Physics Department and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy NY
K. Liang
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
G. Hughes
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Company Annandale, NJ 08801
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Abstract

We report high-resolution small-angle x-ray reflectivity measurements on plasma-deposited a-Ge:H/a-Si:H periodic amorphous multilayers. We show that reflectivity spectra are quite complex, involving components due to relatively smooth and rough layer interfaces at different depths in the sample respectively. Model computations show that interface roughness increases from 3 É at the substrate-sample interface to more than 15 É at the top surface of a 0.5 μm multilayer stack.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 225
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Persans, P.D., Abeles, B., Scanlon, J., and Stasiewski, H., in Proc. of the 17th International Conference on the Physics of Semiconductors, ed. Chadi, J.D. and Harrison, W.A., (Springer-Verlag, New York, 1985), 499.Google Scholar
Abeles, B. and Tiedje, T., Phys. Rev. Lett., 51, 2003, (1983).Google Scholar
3. Wronski, C., Persans, P., and Abeles, B., Appl. Phys. Lett., 49, 596, (1986).Google Scholar
4. Persans, P., Wronski, C., and Abeles, B., in “Disordered Semiconductors”, ed. Kastner, M., Ovshinsky, S., and Thomas, G., (Plenum, London, 1987), p. 541.Google Scholar
5. Persans, P., Ruppert, A.F., Abeles, B., and Tiedje, T., Phys. Rev. B., 32, (1985), 5558.Google Scholar
6. Persans, P., Phys. Rev. B, 39, 1797, (1989).Google Scholar
7. Abeles, B., Persans, P. D., Stasiewski, H. S., Yang, L. Y., and Lanford, W, Appl. Phys. Lett., 48, 168, (1986).Google Scholar
8. Ruppert, A.F., Persans, P.D., Abeles, B., Hughes, G., and Liang, K.S., Phys. Rev. B, in press, (1990).Google Scholar
9. Persans, P.D., Ruppert, A. F., Abeles, B., Hughes, G., and Liang, K. S., Mat. Res. Soc. Symp. Proc. 149, 711, (1989).Google Scholar
10. Underwood, J.H. and Barbee, T.W. Jr. in Low Energy X-ray Diagnostics, ed. Atwood, D.T., and Henke, B.L., American Institute of Physics Conference Proceedings no. 75, p.170, (1981).Google Scholar
11. Parratt, L. G., Phys. Rev., 95, 359, (1954).Google Scholar
12. Pardo, B. and Andre, J.M., Rev. Phys. Applique, 23, 1675, (1988.)Google Scholar
13. Le Boite, M.G., Traverse, A., Nevot, L., Pardo, B., and Corno, J., J.Mat. Res., 3, 1089, (1988).Google Scholar
14. Persans, P. D., Ruppert, A. F., Wu, Y.J., Abeles, B., Lanford, W., and , Pantojas, V., J. Non-Cryst. Sol., 114, 771, (1989).Google Scholar
15. Abeles, B., Tiedje, T., Liang, K.S., Deckman, H.W., Stasiewski, H.C., Scanlon, J.C., and Eisenberger, P.M., J. Non-Cryst. Sol. 66, 351, (1984).Google Scholar
16. Miyazaki, S., Kohda, Y., Hazama, Y., and Hirose, M., J. Non-Cryst. Sol., 114, 774, (1989).Google Scholar