Hostname: page-component-54dcc4c588-nx7b4 Total loading time: 0 Render date: 2025-10-03T09:36:00.388Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics of Both Defects and Electron and Hole Diffusion Lengths During Light-Soaking in a-Si:H Films

Published online by Cambridge University Press:  10 February 2011

A. S. Abramov ,
A. I. Kosarev ,
P. Roca i Cabarrocas  and
A. J. Vinogradov
A. S. Abramov
Affiliation:
SSE Department, Ioffe Physical-Technical Institute, St.-Petersburg, 194021, Russia, kosarev@kos.ioffe.rssi.ru
A. I. Kosarev
Affiliation:
SSE Department, Ioffe Physical-Technical Institute, St.-Petersburg, 194021, Russia, kosarev@kos.ioffe.rssi.ru
P. Roca i Cabarrocas
Affiliation:
labaratoire de Physique des interfaces et des Couches Minces (UPR 258 CNRS), Ecole Polytechnique, 91128 Palaiseau Codex, France
A. J. Vinogradov
Affiliation:
SSE Department, Ioffe Physical-Technical Institute, St.-Petersburg, 194021, Russia, kosarev@kos.ioffe.rssi.ru
Get access

Abstract

Concomitant studies of kinetics of defects ND(t), photoconductivity σph(t), electron and hole diffision lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (˜ 103s) and then decreased with characteri stic time ˜ 104s.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 659
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Ritter, D., Zeldov, E. and Weiser, K., Appl. Phys.Lett., 49, p.791(1986).Google Scholar
2. Wang, F. and Schwarz, R., to be published in J.Non-Cryst. Solids (1996).Google Scholar
3. Sauvain, E., Pipoz, P., Shah, A. and Hubin, J., J.Appl.Phys., 75, p. 1722 (1994)Google Scholar
4. Trofirnov, G.S., Kosarev, A.I., Kovrov, A.G. and LeComber, P.G., J.Non-Cryst.Solids, 137&138, p. 483 (1991).Google Scholar
5. Kosarev, A.I. and Trofimov, G.S., Int.J.Electronics, 76, p. 1023 (1994).Google Scholar
6. Vaneck, M., Kocka, J., Stuchlick, J., Kozicek, Z., Stika, O. and Triska, A., Solar Energy Materials, 8, p.411 (1983).Google Scholar
7. Morin, P., and Cabarrocas, P.Roca i, MRS Symp. Proc. 336, p.281 (1994).Google Scholar