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Kinetics of Carrier-Induced Metastable defect Formation in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Warren B. Jackson  and
M. D. Moyer
Warren B. Jackson
Affiliation:
Xerox Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
M. D. Moyer
Affiliation:
Xerox Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

This paper investigates the creation rate of carrier-induced defects in hydrogenated amorphous silicon (a-Si:H) metal-insulator-semiconductor (MIS) devices. The results demonstrate that holes increase the rate of defect formation by over 3 orders of magnitude while electrons increase the rate by roughly an order of magnitude. The carrier-induced defect kinetics, light-induced defect annealing, and decay of excess carriers in doped a-Si:H are quantitatively consistent with dispersive diffusion of hydrogen involved in the metastable process. The results provide strong evidence for the involvement of hydrogen in metastable effects in a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 231
Copyright
Copyright © Materials Research Society 1988

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