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Large-area porous alumina photonic crystals via imprint method

Published online by Cambridge University Press:  01 February 2011

J. Choi
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
J. Schilling
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
K. Nielsch
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
R. Hillebrand
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
M. Reiche
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
R. B. Wehrspohn
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
U. Gösele
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
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Abstract

A perfect 2D porous alumina photonic crystal with 500 nm interpore distance was fabricated on an area of 4 cm2 via imprint methods and subsequent electrochemical anodization. A 4” imprint stamp consisting of a convex pyramid array was obtained by modern VLSI processing using DUV-lithography, anisotropic etching, LPCVD Si3N4 deposition and wafer bonding. The optical properties of the porous alumina photonic crystal were measured with an infrared microscope in Г-M direction. For both polarizations, a bandgap is observed at around 1 μm for r/a = 0.42. A reflectivity of almost unity for E-polarization in the region of the bandgap is a sign of the high quality of the structure, indicating almost no scattering losses. These experimental results could be correlated very well to the bandstructure as well as reflectivity calculations assuming a dielectric constant of å = 2.0 for the anodized alumina.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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