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Layered Compound Semiconductor GaSe and GaTe Crystals for THz Applications

Published online by Cambridge University Press:  26 February 2011

Krishna C. Mandal
Affiliation:
kmandal@eiclabs.com, EIC Laboratories, Inc., Advanced Materials Division, 111 Downey Street, Norwood, MA, 02062, United States, 781-769-9450, 781-551-0283
Sung H. Kang
Affiliation:
skang@eiclabs.com, EIC Laboratories, Inc., Advanced Materials Division, 111 Downey Street, Norwood, MA, 02062, United States
Michael K. Choi
Affiliation:
mchoi@eiclabs.com, EIC Laboratories, Inc., Advanced Materials Division, 111 Downey Street, Norwood, MA, 02062, United States
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Abstract

The single crystal growth of layered semiconductors GaSe and GaTe by vertical Bridgman technique using zone refined selenium (Se), tellurium (Te) and high purity (HP) gallium (Ga) have been described. The grown crystals (2.5 cm diameter and ∼10 cm long) have demonstrated efficient broadband tunable THz emission and as sensitive THz detectors. The crystals have shown promising characteristics with good optical quality, high dark resistivity, wide band gap (GaSe-2.01 eV and GaTe-1.66 eV at 300 K), good anisotropic (parallel, p & perpendicular, pa) electrical properties (σ∥ vs σ and μ∥ vs σ) and long term stability. Different steps involved in processing GaSe and GaTe crystals as THz sources and sensors are described.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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